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| HAT3004R Silicon N and P Channel Power MOS FET Application High speed power switching SOP-8 5 76 8 Features * * * * Low on-resistance Capable of 4V gate drive Low drive current High density mounting 78 D1 2 G1 4 G2 D2 3 12 56 4 Ordering Information ---------------------------------------- Hitachi Code EIAJ Code JEDEC Code FP-8DA -- MS-012AA S1 1 S2 3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 1 Absolute Maximum Ratings (Ta = 25C) Nch Pch Ratings ---------------- Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* Pch*** Pch** Tch Tstg Nch 30 20 3.5 14 2.0 1.3 150 -55 to +150 Pch -30 20 -2.5 -10 Unit V V A A W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** 1 Drive operation : *** 2 Drive operation When using surface mounted on FR4 board HAT3004R (N channel) Table 2 Electrical Characteristics N Channel (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 30 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- (0.08) 10 10 2.0 0.1 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 2A VGS = 10V * ID = 2A VGS = 4V * ID = 2 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 2 A VDD = 10 V ------------------------------------------------ -- (0.11) 0.15 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr (2.0) (3.0) -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- (180) (110) (45) (10) (60) (25) (20) (0.8) -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 3.5A, VGS = 0 IF = 3.5A, VGS = 0 diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- (50) -- ns -------------------------------------------------------------------------------------- HAT3004R (P channel) Table 2 Electrical Characteristics P Channel (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -30 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, ID = -1 mA -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- (0.13) 10 -10 -2.0 0.25 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -1 A VGS = -10 V * ID = -1 A VGS = -4 V * ID = -1 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz VGS = -4 V, ID = -1 A VDD = -10 V ------------------------------------------------ -- (0.2) 0.4 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr (2.0) (3.0) -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- (250) (150) (60) (10) (60) (20) (25) (-0.8) -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -2.5A, VGS = 0 IF = -2.5A, VGS = 0 diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- (50) -- ns -------------------------------------------------------------------------------------- HAT3004R Power vs. Temperature Derating 2.0 Pch* (W) *** 1.5 ** 1.0 Channel Dissipation 0.5 0 50 100 150 Ta (C) 200 Ambient Temperature * When using surface mounted on FR4 board ** 1 Drive Operation *** 2 Drive Operation Package Dimensions Unit : mm * SOP-8 5.2 Max 4.05 Max 8 5 1 0.75 Max 4 1.75 Max 6.3 Max 0.05 0.20 + 0.02 - 0 - 10 1.27 0.40 + 0.10 - 0.05 0.10 0.10 0.25 0.60 + 0.18 - 0.1 0.12 M Hitachi Code FP-8DA -- EIAJ MS-012AA JEDEC |
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